Nano-Dimentional Imperfections in Crystals

Description: The main sections are studied: structural crystallography; point defects; basic types of dislocations and their properties; disclinations, grain boundaries and subgrains; inhibition of dislocations and hardening of crystalline materials.

Amount of credits: 6

Пререквизиты:

• Electronic-Microscopic Analysis

Course Workload:

Component: University component

Cycle: Profiling disciplines

Goal

• Presentation of the key issues of the theory of the real (defective) structure of solid-phase compounds, formation of theoretical ideas about the relationship between the structure and properties of substances for the subsequent use of the acquired knowledge in the study of the possibility of developing materials with a given set of properties necessary for practical use.

Objective

• to give a systematic description of the fundamentals of condensed matter physics, including general ideas about the structure of crystalline and amorphous substances; tensor physical properties of single crystals; to present the theory of defects in real crystals and their influence on the electronics of conductors.

Learning outcome: knowledge and understanding

• Mastering modern methods of studying defects in crystal structures

Learning outcome: applying knowledge and understanding

• Introduction to the basic elements of crystallography and materials science; fundamentals of linear and matrix algebra, differential and integral calculus; basic concepts of structural defects and their types; methods for growing bulk crystals and epitaxial semiconductor structures.

Learning outcome: formation of judgments

• It promotes the formation of a holistic scientific outlook and physical thinking among graduate students, the ability to apply physical laws, including the laws of quantum solid state physics, to analyze the influence of lattice defects on transport phenomena in condensed matter in general and semiconductor physics in particular, and constructive views on solving scientific and technical problems of modern semiconductor micro-and nanoelectronics.

Learning outcome: communicative abilities

• describe structural defects in crystalline and amorphous substances; apply tensor calculus to solve professional problems; independently process and analyze experimental results.

Learning outcome: learning skills or learning abilities

• use the basic relations of crystallography to analyze the structure of materials

Teaching methods

When conducting training sessions, the following educational technologies are provided for:: - interactive lecture (using the following active forms of learning: executive (guided) discussion or conversation; moderation; demonstration of slides or educational films; brainstorming; motivational speech); - building scenarios for the development of various situations based on the specified conditions; - information and communication (for example, classes in a computer class using professional application software packages); - search and research (independent research activity of students in the educational process).

Assessment of the student's knowledge

Teacher oversees various tasks related to ongoing assessment and determines students' current performance twice during each academic period. Ratings 1 and 2 are formulated based on the outcomes of this ongoing assessment. The student's learning achievements are assessed using a 100-point scale, and the final grades P1 and P2 are calculated as the average of their ongoing performance evaluations. The teacher evaluates the student's work throughout the academic period in alignment with the assignment submission schedule for the discipline. The assessment system may incorporate a mix of written and oral, group and individual formats.

The evaluating policy of learning outcomes by work type

Evaluation form

The student's final grade in the course is calculated on a 100 point grading scale, it includes:

• 40% of the examination result;
• 60% of current control result.

The final grade is calculated by the formula:

 

Where Midterm 1, Midterm 2are digital equivalents of the grades of Midterm 1 and 2;

E is a digital equivalent of the exam grade.

Final alphabetical grade and its equivalent in points:

The letter grading system for students' academic achievements, corresponding to the numerical equivalent on a four-point scale:

Topics of lectures

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Key reading

• 1. Кнотько А.В., Пресняков Е.А., Третьяков Ю.Д. Химия твердого тела. - Academa М, 2006. - 301 с. 2. Вест А. Химия твердого тела - т. 1,2 - М., Мир, 1988. - 554 с. 3. Павлов П.В., Хохлов А.Ф. Физика твердого тела - М., Высшая школа, 1999. - 491с. 4. Чеботин В.Н. Физическая химия твердого тела - М., Наука, 1982. -319 с. 5. Алесковский В.Б. Химия твердых веществ - М., Высшая школа,1978. - 256 с. 6. Моррисон С. Химическая физика поверхности твердого тела - М., 1980. - 488 с. 7. Хенней Н. Химия твердого тела - М., Мир, 1971. - 223 с. 8. Кнорре Д.Г. и др. Физическая химия - М., Высшая школа, 1990. - 415 с. 9. Жданов Г.С., Хунджда А.Г. Лекции по физике твердого тела - М., МГУ, 1988. - 231с. 10. Крегер Ф.Химия несовершенных кристалолов.- М. Мир. 1969. - 654 с. 11. Жуковский В.М., Петров А.Н. Введение в химию твердого тела. Уч. gособие. - Изд-во УрГУ, Свердловск, 1987. - 112 с. 12. Рао Ч.Н.Р., Гопалакришнан Дж. Новые направления в химии твердого тела. –«Наука», Новосибирск СО, 1990. - 519 с. 13. Петров А.Н., Черепанов В.А. «Кристаллохимия твердого состояния». Уч. пособие - Изд-во УрГУ, Свердловск, 1987. - 94 с.